IndiumV3, Main, Repository, bibRecord, 000856

Nanoscale Imaging of InN Segregation and Polymorphism in Single Vertically Aligned InGaN/GaN Multi Quantum Well Nanorods by Tip-Enhanced Raman Scattering

Identifieur interne : 000856 ( Main/Repository ); précédent : 000855; suivant : 000857

Nanoscale Imaging of InN Segregation and Polymorphism in Single Vertically Aligned InGaN/GaN Multi Quantum Well Nanorods by Tip-Enhanced Raman Scattering

Auteurs : RBID : Pascal:13-0255318

Descripteurs français

Pascal (Inist)
- Nanostructure, Echelle nanométrique, Formation image, Composé III-V, Ségrégation, Polymorphisme, Structure cristalline, Semiconducteur III-V, Puits quantique multiple, Nanobâtonnet, Nanomatériau, Diffusion Raman, Réseau(arrangement), Méthode MOVPE, Nitrure d'indium, Nitrure de gallium, Epitaxie phase vapeur, Propriété chimique, Résolution spatiale, Spectrométrie Raman, Composition chimique, Distribution contrainte, Champ déformation, Fluctuation, Résolution latérale, Indium, Réseau cubique, Résolution image, Microscopie électronique transmission, Défaut empilement, Optimisation, InN, InGaN, GaN, Substrat GaN, Substrat saphir, 6865, 6146, 8107S, 8107D.

English descriptors

KwdEn :
- Arrays, Chemical composition, Chemical properties, Crystal structure, Cubic lattices, Fluctuations, Gallium nitride, III-V compound, III-V semiconductors, Image resolution, Imaging, Indium, Indium nitride, Lateral resolution, MOVPE method, Multiple quantum well, Nanometer scale, Nanorod, Nanostructured materials, Nanostructures, Optimization, Polymorphism, Raman scattering, Raman spectroscopy, Segregation, Spatial resolution, Stacking faults, Strain distribution, Stress distribution, Transmission electron microscopy, VPE.

Abstract

Vertically aligned GaN nanorod arrays with nonpolar InGaN/ GaN multi quantum wells (MQW) were grown by MOVPE on c-plane GaN-on-sapphire templates. The chemical and structural properties of single nanorods are optically investigated with a spatial resolution beyond the diffraction limit using tip-enhanced Raman spectroscopy (TERS). This enables the local mapping of variations in the chemical composition, charge distribution, and strain in the MQW region of the nanorods. Nanoscale fluctuations of the In content in the InGaN layer of a few percent can be identified and visualized with a lateral resolution below 35 nm. We obtain evidence for the presence of indium clustering and the formation of cubic inclusions in the wurtzite matrix near the QW layers. These results are directly confirmed by high-resolution TEM images, revealing the presence of stacking faults and different polymorphs close to the surface near the MQW region. The combination of TERS and HRTEM demonstrates the potential of this nanoscale near-field imaging technique, establishing TERS as a very potent, comprehensive, and nondestructive tool for the characterization and optimization of technologically relevant semiconductor nanostructures.

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<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Arrays</term>
<term>Chemical composition</term>
<term>Chemical properties</term>
<term>Crystal structure</term>
<term>Cubic lattices</term>
<term>Fluctuations</term>
<term>Gallium nitride</term>
<term>III-V compound</term>
<term>III-V semiconductors</term>
<term>Image resolution</term>
<term>Imaging</term>
<term>Indium</term>
<term>Indium nitride</term>
<term>Lateral resolution</term>
<term>MOVPE method</term>
<term>Multiple quantum well</term>
<term>Nanometer scale</term>
<term>Nanorod</term>
<term>Nanostructured materials</term>
<term>Nanostructures</term>
<term>Optimization</term>
<term>Polymorphism</term>
<term>Raman scattering</term>
<term>Raman spectroscopy</term>
<term>Segregation</term>
<term>Spatial resolution</term>
<term>Stacking faults</term>
<term>Strain distribution</term>
<term>Stress distribution</term>
<term>Transmission electron microscopy</term>
<term>VPE</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Nanostructure</term>
<term>Echelle nanométrique</term>
<term>Formation image</term>
<term>Composé III-V</term>
<term>Ségrégation</term>
<term>Polymorphisme</term>
<term>Structure cristalline</term>
<term>Semiconducteur III-V</term>
<term>Puits quantique multiple</term>
<term>Nanobâtonnet</term>
<term>Nanomatériau</term>
<term>Diffusion Raman</term>
<term>Réseau(arrangement)</term>
<term>Méthode MOVPE</term>
<term>Nitrure d'indium</term>
<term>Nitrure de gallium</term>
<term>Epitaxie phase vapeur</term>
<term>Propriété chimique</term>
<term>Résolution spatiale</term>
<term>Spectrométrie Raman</term>
<term>Composition chimique</term>
<term>Distribution contrainte</term>
<term>Champ déformation</term>
<term>Fluctuation</term>
<term>Résolution latérale</term>
<term>Indium</term>
<term>Réseau cubique</term>
<term>Résolution image</term>
<term>Microscopie électronique transmission</term>
<term>Défaut empilement</term>
<term>Optimisation</term>
<term>InN</term>
<term>InGaN</term>
<term>GaN</term>
<term>Substrat GaN</term>
<term>Substrat saphir</term>
<term>6865</term>
<term>6146</term>
<term>8107S</term>
<term>8107D</term>
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<front><div type="abstract" xml:lang="en">Vertically aligned GaN nanorod arrays with nonpolar InGaN/  GaN multi quantum wells (MQW) were grown by MOVPE on c-plane GaN-on-sapphire templates. The chemical and structural properties of single nanorods are optically investigated with a spatial resolution beyond the diffraction limit using tip-enhanced Raman spectroscopy (TERS). This enables the local mapping of variations in the chemical composition, charge distribution, and strain in the MQW region of the nanorods. Nanoscale fluctuations of the In content in the InGaN layer of a few percent can be identified and visualized with a lateral resolution below 35 nm. We obtain evidence for the presence of indium clustering and the formation of cubic inclusions in the wurtzite matrix near the QW layers. These results are directly confirmed by high-resolution TEM images, revealing the presence of stacking faults and different polymorphs close to the surface near the MQW region. The combination of TERS and HRTEM demonstrates the potential of this nanoscale near-field imaging technique, establishing TERS as a very potent, comprehensive, and nondestructive tool for the characterization and optimization of technologically relevant semiconductor nanostructures.</div>
</front>
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<s5>12</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Difusión Ramán</s0>
<s5>12</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>Réseau(arrangement)</s0>
<s5>13</s5>
</fC03>
<fC03 i1="13" i2="3" l="ENG"><s0>Arrays</s0>
<s5>13</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Méthode MOVPE</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>MOVPE method</s0>
<s5>14</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Método MOVPE</s0>
<s5>14</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Nitrure d'indium</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG"><s0>Indium nitride</s0>
<s5>15</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA"><s0>Indio nitruro</s0>
<s5>15</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>Nitrure de gallium</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG"><s0>Gallium nitride</s0>
<s5>16</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA"><s0>Galio nitruro</s0>
<s5>16</s5>
</fC03>
<fC03 i1="17" i2="3" l="FRE"><s0>Epitaxie phase vapeur</s0>
<s5>29</s5>
</fC03>
<fC03 i1="17" i2="3" l="ENG"><s0>VPE</s0>
<s5>29</s5>
</fC03>
<fC03 i1="18" i2="3" l="FRE"><s0>Propriété chimique</s0>
<s5>30</s5>
</fC03>
<fC03 i1="18" i2="3" l="ENG"><s0>Chemical properties</s0>
<s5>30</s5>
</fC03>
<fC03 i1="19" i2="3" l="FRE"><s0>Résolution spatiale</s0>
<s5>31</s5>
</fC03>
<fC03 i1="19" i2="3" l="ENG"><s0>Spatial resolution</s0>
<s5>31</s5>
</fC03>
<fC03 i1="20" i2="3" l="FRE"><s0>Spectrométrie Raman</s0>
<s5>32</s5>
</fC03>
<fC03 i1="20" i2="3" l="ENG"><s0>Raman spectroscopy</s0>
<s5>32</s5>
</fC03>
<fC03 i1="21" i2="3" l="FRE"><s0>Composition chimique</s0>
<s5>33</s5>
</fC03>
<fC03 i1="21" i2="3" l="ENG"><s0>Chemical composition</s0>
<s5>33</s5>
</fC03>
<fC03 i1="22" i2="3" l="FRE"><s0>Distribution contrainte</s0>
<s5>34</s5>
</fC03>
<fC03 i1="22" i2="3" l="ENG"><s0>Stress distribution</s0>
<s5>34</s5>
</fC03>
<fC03 i1="23" i2="X" l="FRE"><s0>Champ déformation</s0>
<s5>35</s5>
</fC03>
<fC03 i1="23" i2="X" l="ENG"><s0>Strain distribution</s0>
<s5>35</s5>
</fC03>
<fC03 i1="23" i2="X" l="SPA"><s0>Campo deformación</s0>
<s5>35</s5>
</fC03>
<fC03 i1="24" i2="3" l="FRE"><s0>Fluctuation</s0>
<s5>36</s5>
</fC03>
<fC03 i1="24" i2="3" l="ENG"><s0>Fluctuations</s0>
<s5>36</s5>
</fC03>
<fC03 i1="25" i2="X" l="FRE"><s0>Résolution latérale</s0>
<s5>37</s5>
</fC03>
<fC03 i1="25" i2="X" l="ENG"><s0>Lateral resolution</s0>
<s5>37</s5>
</fC03>
<fC03 i1="25" i2="X" l="SPA"><s0>Resolución lateral</s0>
<s5>37</s5>
</fC03>
<fC03 i1="26" i2="3" l="FRE"><s0>Indium</s0>
<s2>NC</s2>
<s5>38</s5>
</fC03>
<fC03 i1="26" i2="3" l="ENG"><s0>Indium</s0>
<s2>NC</s2>
<s5>38</s5>
</fC03>
<fC03 i1="27" i2="3" l="FRE"><s0>Réseau cubique</s0>
<s5>39</s5>
</fC03>
<fC03 i1="27" i2="3" l="ENG"><s0>Cubic lattices</s0>
<s5>39</s5>
</fC03>
<fC03 i1="28" i2="3" l="FRE"><s0>Résolution image</s0>
<s5>40</s5>
</fC03>
<fC03 i1="28" i2="3" l="ENG"><s0>Image resolution</s0>
<s5>40</s5>
</fC03>
<fC03 i1="29" i2="3" l="FRE"><s0>Microscopie électronique transmission</s0>
<s5>41</s5>
</fC03>
<fC03 i1="29" i2="3" l="ENG"><s0>Transmission electron microscopy</s0>
<s5>41</s5>
</fC03>
<fC03 i1="30" i2="3" l="FRE"><s0>Défaut empilement</s0>
<s5>42</s5>
</fC03>
<fC03 i1="30" i2="3" l="ENG"><s0>Stacking faults</s0>
<s5>42</s5>
</fC03>
<fC03 i1="31" i2="3" l="FRE"><s0>Optimisation</s0>
<s5>43</s5>
</fC03>
<fC03 i1="31" i2="3" l="ENG"><s0>Optimization</s0>
<s5>43</s5>
</fC03>
<fC03 i1="32" i2="3" l="FRE"><s0>InN</s0>
<s4>INC</s4>
<s5>46</s5>
</fC03>
<fC03 i1="33" i2="3" l="FRE"><s0>InGaN</s0>
<s4>INC</s4>
<s5>47</s5>
</fC03>
<fC03 i1="34" i2="3" l="FRE"><s0>GaN</s0>
<s4>INC</s4>
<s5>48</s5>
</fC03>
<fC03 i1="35" i2="3" l="FRE"><s0>Substrat GaN</s0>
<s4>INC</s4>
<s5>49</s5>
</fC03>
<fC03 i1="36" i2="3" l="FRE"><s0>Substrat saphir</s0>
<s4>INC</s4>
<s5>50</s5>
</fC03>
<fC03 i1="37" i2="3" l="FRE"><s0>6865</s0>
<s4>INC</s4>
<s5>71</s5>
</fC03>
<fC03 i1="38" i2="3" l="FRE"><s0>6146</s0>
<s4>INC</s4>
<s5>72</s5>
</fC03>
<fC03 i1="39" i2="3" l="FRE"><s0>8107S</s0>
<s4>INC</s4>
<s5>73</s5>
</fC03>
<fC03 i1="40" i2="3" l="FRE"><s0>8107D</s0>
<s4>INC</s4>
<s5>74</s5>
</fC03>
<fN21><s1>245</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
</standard>
</inist>
</record>

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   |wiki=   *** parameter Area/wikiCode missing *** 
   |area=    IndiumV3
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   |texte=   Nanoscale Imaging of InN Segregation and Polymorphism in Single Vertically Aligned InGaN/GaN Multi Quantum Well Nanorods by Tip-Enhanced Raman Scattering
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Nanoscale Imaging of InN Segregation and Polymorphism in Single Vertically Aligned InGaN/GaN Multi Quantum Well Nanorods by Tip-Enhanced Raman Scattering

Nanoscale Imaging of InN Segregation and Polymorphism in Single Vertically Aligned InGaN/GaN Multi Quantum Well Nanorods by Tip-Enhanced Raman Scattering

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